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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP83P06PDG
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
NP83P06PDG-E1-AY
Note
LEAD PLATING
PACKING
PACKAGE
NP83P06PDG-E2-AY
Note
Pure Sn (Tin)
Tape 800 p/reel
TO-263 (MP-25ZP)
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
? Super low on-state resistance
R DS(on)1 = 8.8 m Ω MAX. (V GS = ? 10 V, I D = ? 41.5 A)
R DS(on)2 = 12 m Ω MAX. (V GS = ? 4.5 V, I D = ? 41.5 A)
? High current rating: I D(DC) = m 83 A
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C)
(TO-263)
Drain Current (pulse)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
Note1
Total Power Dissipation (T C = 25 ° C)
Total Power Dissipation (T A = 25 ° C)
Channel Temperature
Storage Temperature
V DSS
V GSS
I D(DC)
I D(pulse)
P T1
P T2
T ch
T stg
? 60
m 20
m 83
m 249
150
1.8
175
? 55 to + 175
V
V
A
A
W
W
° C
° C
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I AS
E AS
49
240
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Starting T ch = 25 ° C, V DD = ? 30 V, R G = 25 Ω , V GS = ? 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
1.0
83.3
° C/W
° C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18691EJ3V0DS00 (3rd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007
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